1 motorola igbt device data designer's ? data sheet insulated gate bipolar transistor nchannel enhancementmode silicon gate this insulated gate bipolar transistor (igbt) uses an advanced termination scheme to provide an enhanced and reliable high voltageblocking capability. its new 600 v igbt technology is specifically suited for applications requiring both a high tempera- ture short circuit capability and a low v ce(on) . it also provides fast switching characteristics and results in efficient operation at high frequencies. this new eseries introduces an energy efficient, esd protected, and short circuit rugged device. ? industry standard to220 package ? high speed: e off = 70 j/a typical at 125 c ? high voltage short circuit capability 10 s minimum at 125 c, 400 v ? low onvoltage 2.0 v typical at 5.0 a, 125 c ? robust high voltage termination ? esd protection gateemitter zener diodes maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit collectoremitter voltage v ces 600 vdc collectorgate voltage (r ge = 1.0 m w ) v cgr 600 vdc gateemitter voltage e continuous v ge 20 vdc collector current e continuous @ t c = 25 c collector current e continuous @ t c = 90 c collector current e repetitive pulsed current (1) i c25 i c90 i cm 10 7.0 14 adc apk total power dissipation @ t c = 25 c derate above 25 c p d 81 0.65 watts w/ c operating and storage junction temperature range t j , t stg 55 to 150 c short circuit withstand time (v cc = 400 vdc, v ge = 15 vdc, t j = 125 c, r g = 20 w ) t sc 10 s thermal resistance e junction to case igbt thermal resistance e junction to ambient r q jc r q ja 1.5 65 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c mounting torque, 632 or m3 screw 10 lbf in (1.13 n m) (1) pulse width is limited by maximum junction temperature. repetitive rating. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. designer's is a trademark of motorola, inc. order this document by mgp7n60e/d motorola semiconductor technical data mgp7n60e igbt in to220 7.0 a @ 90 c 10 a @ 25 c 600 volts short circuit rated low onvoltage case 221a09 style 9 to220ab c e g g c e ? motorola, inc. 1998
mgp7n60e 2 motorola igbt device data electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectortoemitter breakdown voltage (v ge = 0 vdc, i c = 25 m adc) temperature coefficient (positive) v (br)ces 600 e e 870 e e vdc mv/ c emittertocollector breakdown voltage (v ge = 0 vdc, i ec = 100 madc) v (br)ecs 15 e e vdc zero gate voltage collector current (v ce = 600 vdc, v ge = 0 vdc) (v ce = 600 vdc, v ge = 0 vdc, t j = 125 c) i ces e e e e 10 200 m adc gatebody leakage current (v ge = 20 vdc, v ce = 0 vdc) i ges e e 50 adc on characteristics (1) collectortoemitter onstate voltage (v ge = 15 vdc, i c = 2.5 adc) (v ge = 15 vdc, i c = 2.5 adc, t j = 125 c) (v ge = 15 vdc, i c = 5.0 adc) v ce(on) e e e 1.6 1.5 2.0 1.9 e 2.4 vdc gate threshold voltage (v ce = v ge , i c = 1.0 madc) threshold temperature coefficient (negative) v ge(th) 4.0 e 6.0 10 8.0 e vdc mv/ c forward transconductance (v ce = 10 vdc, i c = 5.0 adc) g fe e 2.5 e mhos dynamic characteristics input capacitance (v 25 vd v 0vd c ies e 610 e pf output capacitance (v ce = 25 vdc, v ge = 0 vdc, f = 1.0 mhz ) c oes e 60 e transfer capacitance f = 1 . 0 mhz) c res e 10 e switching characteristics (1) turnon delay time t d(on) e 22 e ns rise time (v cc = 360 vdc, i c = 5.0 adc, v 15 vd l 300 h t r e 24 e turnoff delay time ( cc , c , v ge = 15 vdc, l = 300 h, r g = 20 w ) t d(off) e 64 e fall time r g = 20 w ) energy losses include atailo t f e 196 e turnoff switching loss e off e 0.20 0.34 mj turnon delay time t d(on) e 31 e ns rise time (v cc = 360 vdc, i c = 5.0 adc, v 15 vd l 300 h t r e 24 e turnoff delay time ( cc , c , v ge = 15 vdc, l = 300 h, r g = 2 0 w , t j = 12 5 c) t d(off) e 195 e fall time r g = 20 w , t j = 125 c) energy losses include atailo t f e 220 e turnoff switching loss e off e 0.35 e mj gate charge (v 360 vd i 50ad q t e 27.2 e nc (v cc = 360 vdc, i c = 5.0 adc, v ge = 15 vdc ) q 1 e 7.0 e v g e = 15 vdc) q 2 e 13.7 e internal package inductance internal emitter inductance (measured from the emitter lead 0.25 from package to emitter bond pad) l e e 7.5 e nh (1) pulse test: pulse width 300 m s, duty cycle 2%.
mgp7n60e 3 motorola igbt device data figure 1. output characteristics figure 2. output characteristics figure 3. transfer characteristics figure 4. v ce versus junction temperature figure 5. capacitance variation figure 6. v ge versus total charge 8 0 v ce , collector-to-emitter voltage (volts) 15 20 10 10 12 5 v ge , gate-to-emitter voltage (volts) 12 8 6 4 2 0 t j , junction temperature ( c) -25 -50 2.2 1.8 1.6 1.4 1.2 1.0 0 11 10 0 v ce , collector-to-emitter voltage (volts) 1200 800 600 400 200 0 q g , total gate charge (nc) 530 0 20 16 12 4 0 5 i c , collector current (amps) v ce(on) , collector-to-emitter on-state 5 0 3 12 4567 6 7 8 9 25 50 75 100 125 150 c, capacitance (pf) 15 25 20 1000 10 15 35 20 25 8 v 8 0 v ce , collector-to-emitter voltage (volts) 15 20 10 i c , collector current (amps) 5 0 3 12 4567 i c , collector current (amps) 13 10 2.0 , gate-to-emitter voltage (volts) ge t j = 25 c i c = 5.0 a q1 q2 qt v ge = 0 v t j = 25 c c ies c oes c res t j = 25 c v ge = 10 v 12.5 v 15 v 17.5 v 20 v t j = 125 c v ge = 10 v 12.5 v 15 v 17.5 v 20 v i c = 5.0 a 3.75 a 2.5 a t j = 125 c 25 c voltage (volts) v ce = 100 v 5 s pulse width v ge = 15 v 80 s pulse width
mgp7n60e 4 motorola igbt device data figure 7. turnoff losses versus gate resistance figure 8. turnoff losses versus junction temperature figure 9. turnoff energy losses versus collector current figure 10. reverse biased safe operating area 50 10 gate resistance (ohms) 0.4 0.5 0.3 57 0 i c , collector current (amps) 0.6 0.4 0.3 0.2 0.1 0 v ce , collector-to-emitter voltage (volts) 1 100 10 1 6 i c , collector current (amps) 0.1 0 25 15 20 30 35 40 45 1 2 3 4 10 100 1000 150 0 t j , junction temperature ( c) 0.3 0.5 0.2 0.1 0 50 25 75 100 125 , turn-off energy losses (mj) 8 0.5 0.2 0.4 v cc = 360 v v ge = 15 v t j = 125 c i c = 5.0 a 3.75 a 2.5 a v cc = 360 v v ge = 15 v r g = 20 i c = 5.0 a 3.75 a 2.5 a v ge = 15 v r ge = 20 t j = 125 c v cc = 360 v v ge = 15 v r g = 20 t j = 125 c e off , turn-off energy losses (mj) e off , turn-off energy losses (mj) e off
mgp7n60e 5 motorola igbt device data package dimensions case 221a09 to220ab issue z style 9: pin 1. gate 2. collector 3. emitter 4. collector notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
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